Product Summary

The BLF545 is a Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The BLF545 is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Parametrics

BLF545 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)±VGS, gate-source voltage: 20 V; (3)ID, DC drain current: 3.5 A; (4)Ptot, total power dissipation: 92 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃.

Features

BLF545 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability; (5)Designed for broadband operation.

Diagrams

BLF545 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF545
BLF545
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Data Sheet
Negotiable 
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