Product Summary

The MJ11033G is a High-Current Complementary Silicon Power Transistor. It is for use as output devices in complementary general purpose amplifier applications.

Parametrics

MJ11033G absolute maximum ratings: (1)Collector-Emitter Voltage: 120V; (2)Collector-Base Voltage: 120V; (3)Emitter-Base Voltage: 5.0V; (4)Collector Current: Continuous:50A, Peak:100A; (5)Base Current - Continuous:2.0A; (6)Total Power Dissipation @ TC = 25℃:200W; (7)Derate Above 25℃ @ TC = 100℃:1.71W/℃; (8)Operating and Storage Junction Temperature Range:-55℃ to +200℃.

Features

MJ11033G features: (1)High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc, hFE = 400 (Min) @ IC = 50 Adc; (2)Curves to 100 A (Pulsed); (3)Diode Protection to Rated IC; (4)Monolithic Construction with Built-In Base-Emitter Shunt Resistor; (5)Junction Temperature to +200℃; (6)Pb-Free Packages are Available.

Diagrams

MJ11033G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MJ11033G
MJ11033G

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Data Sheet

0-1: $5.14
1-25: $4.26
25-100: $3.73
100-500: $3.32
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Quantity
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