Product Summary

The IRF830PBF is the third generation HEXFET from International Rectifier which provides the designer with the best combination of fast swicthing, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally prefered for all commerical-industrial applications at power dissipation levels to approximately 50 W.

Parametrics

IRF830PBF absolute maximum ratings: (1)Continuous drain current, VGS@ 10V: 4.5 A; (2)Continuous drain current, VGS@10V: 2.9 A; (3)Pulse drain current: 18 A; (4)Power dissiaption: 74 W; (5)Linear derating factor: 0.59 W/℃; (6)Gate-to-source voltage: ±20 V; (7)Single pulse avalanche energy: 280 mJ.

Features

IRF830PBF features: (1)Dynamic dv/dt rating; (2)Repetitive avalanche rated; (3)Fast switching; (4)Ease of paralleling; (5)Simple drive requirements; (6)Lead-free.

Diagrams

IRF830PBF test circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF830PBF
IRF830PBF

Vishay/Siliconix

MOSFET N-Chan 500V 4.5 Amp

Data Sheet

0-1: $0.68
1-10: $0.54
10-100: $0.47
100-250: $0.41
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF8010
IRF8010

Other


Data Sheet

Negotiable 
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International Rectifier

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Data Sheet

1-300: $0.78
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International Rectifier

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Data Sheet

0-1: $2.27
1-25: $1.47
25-100: $1.07
100-250: $1.00
IRF8010S
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Other


Data Sheet

Negotiable 
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International Rectifier

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Data Sheet

0-1: $1.83
1-25: $1.25
25-100: $0.92
100-250: $0.89
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International Rectifier

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Data Sheet

0-1: $2.32
1-25: $1.58
25-100: $1.18
100-250: $1.13