Product Summary
The IRF830PBF is the third generation HEXFET from International Rectifier which provides the designer with the best combination of fast swicthing, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally prefered for all commerical-industrial applications at power dissipation levels to approximately 50 W.
Parametrics
IRF830PBF absolute maximum ratings: (1)Continuous drain current, VGS@ 10V: 4.5 A; (2)Continuous drain current, VGS@10V: 2.9 A; (3)Pulse drain current: 18 A; (4)Power dissiaption: 74 W; (5)Linear derating factor: 0.59 W/℃; (6)Gate-to-source voltage: ±20 V; (7)Single pulse avalanche energy: 280 mJ.
Features
IRF830PBF features: (1)Dynamic dv/dt rating; (2)Repetitive avalanche rated; (3)Fast switching; (4)Ease of paralleling; (5)Simple drive requirements; (6)Lead-free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF830PBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 4.5 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF8010 |
Other |
Data Sheet |
Negotiable |
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IRF8010LPBF |
International Rectifier |
MOSFET N-CH 100V 80A TO-262-3 |
Data Sheet |
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IRF8010PBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
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IRF8010S |
Other |
Data Sheet |
Negotiable |
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IRF8010SPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF8010STRLPBF |
International Rectifier |
MOSFET MOSFT 100V 80A 15mOhm 81nC |
Data Sheet |
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