Product Summary

The BLF545 is a Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The BLF545 is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Parametrics

BLF545 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)±VGS, gate-source voltage: 20 V; (3)ID, DC drain current: 3.5 A; (4)Ptot, total power dissipation: 92 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃.

Features

BLF545 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability; (5)Designed for broadband operation.

Diagrams

BLF545 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
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BLF545
BLF545

Other


Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
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BLF521
BLF521

Other


Data Sheet

Negotiable 
BLF521,112
BLF521,112

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Data Sheet

0-24: $21.53
24-25: $19.91
25-100: $18.65
100-250: $17.42
BLF522
BLF522

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Data Sheet

Negotiable 
BLF542
BLF542

Other


Data Sheet

Negotiable 
BLF542,112
BLF542,112

NXP Semiconductors

Transistors RF MOSFET Power RF DMOS 5W UHF

Data Sheet

0-24: $26.37
24-25: $24.38
25-100: $22.85
100-250: $21.35
BLF543
BLF543

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Data Sheet

Negotiable